|
Other articles related with "Schottky-barrier diodes":
|
47102 |
Qing-Wen Song(宋庆文), Xiao-Yan Tang(汤晓燕), Hao Yuan(袁昊), Yue-Hu Wang(王悦湖), Yi-Meng Zhang(张艺蒙), Hui Guo(郭辉), Ren-Xu Jia(贾仁需), Hong-Liang Lv(吕红亮), Yi-Men Zhang(张义门), Yu-Ming Zhang(张玉明) |
|
|
Fabrications and characterizations of high performance 1.2 kV, 3.3 kV, and 5.0 kV class 4H-SiC power SBDs |
|
|
|
Chin. Phys. B
2016 Vol.25 (4): 47102-047102
[Abstract]
(670)
[HTML 1 KB]
[PDF 5205 KB]
(341)
|
|
57102 |
Yuan Hao (袁昊), Tang Xiao-Yan (汤晓燕), Zhang Yi-Men (张义门), Zhang Yu-Ming (张玉明), Song Qing-Wen (宋庆文), Yang Fei (杨霏), Wu Hao (吴昊) |
|
|
4H-SiC Schottky barrier diodes with semi-insulating polycrystalline silicon field plate termination |
|
|
|
Chin. Phys. B
2014 Vol.23 (5): 57102-057102
[Abstract]
(631)
[HTML 1 KB]
[PDF 437 KB]
(581)
|
First page | Previous Page | Next Page | Last Page | Page 1 of 1 |
|
|